Standards & Documents Search

Displaying 1 - 3 of 3 documents.

Title	Document #	Date
CYCLED TEMPERATURE HUMIDITY BIAS LIFE TEST	JESD22-A100D	Jul 2013
The Cycled Temperature-humidity-bias Life Test is performed for the purpose of evaluating the reliability of nonhermetic packaged solid state devices in humid environments. It employs conditions of temperature cycling, humidity, and bias that accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors that pass through it. The Cycled Temperature-Humidity-Bias Life Test is typically performed on cavity packages (e.g., MQUADs, lidded ceramic pin grid arrays, etc.) as an alternative to JESD22-A101 or JESD22-A110. Committee(s): JC-14, JC-14.1 Free download. Registration or login required.
TEMPERATURE CYCLING	JESD22-A104E	Oct 2014
This standard provides a method for determining solid state devices capability to withstand extreme temperature cycling. This standard applies to single-, dual- and triple-chamber temperature cycling and covers component and solder interconnection testing. It should be noted that this standard does not cover or apply to thermal shock chambers. This test is conducted to determine the ability of components and solder interconnects to withstand mechanical stresses induced by alternating high- and low-temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses. Committee(s): JC-14.1 Free download. Registration or login required.
FAILURE MECHANISMS AND MODELS FOR SEMICONDUCTOR DEVICES	JEP122H	Sep 2016
This publication provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be used in making system failure rate estimations when the only available data is based on tests performed at accelerated stress test conditions. The method to be used is the Sum-of-the-Failure-Rates method. This publication also provides guidance in the selection of reliability modeling parameters, namely functional form, apparent thermal activation energy values and sensitivity to stresses such as power supply voltage, substrate current, current density, gate voltage, relative humidity, temperature cycling range, mobile ion concentration, etc. Committee(s): JC-14.2 Free download. Registration or login required.